PJMH190N60E1_T0_00601
Manufacturer Product Number:

PJMH190N60E1_T0_00601

Product Overview

Manufacturer:

Panjit International Inc.

DiGi Electronics Part Number:

PJMH190N60E1_T0_00601-DG

Description:

600V/ 190MOHM / 20.6A/ EASY TO D
Detailed Description:
N-Channel 600 V 20.6A (Tc) 160W (Tc) Through Hole TO-247AD

Inventory:

1436 Pcs New Original In Stock
12989056
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
OKpm
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

PJMH190N60E1_T0_00601 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
PANJIT
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
20.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id
3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1410 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
160W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247AD
Package / Case
TO-247-3
Base Product Number
PJMH190

Datasheet & Documents

Datasheets

Additional Information

Other Names
3757-PJMH190N60E1_T0_00601
Standard Package
30

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
anbon-semiconductor

BSS138

N-CHANNEL ENHANCEMENT MODE MOSFE

infineon-technologies

IMT65R057M1HXUMA1

SILICON CARBIDE MOSFET

infineon-technologies

IMT65R107M1HXUMA1

SILICON CARBIDE MOSFET

diodes

DMN3030LFG-13

DMN3030LFG-13