Manufacturer Product Number:
SCTH90N65G2V-7
Product Overview
Manufacturer:
STMicroelectronics
DiGi Electronics Part Number:
SCTH90N65G2V-7-DG
Description:
SICFET N-CH 650V 90A H2PAK-7
Detailed Description:
N-Channel 650 V 90A (Tc) 330W (Tc) Surface Mount H2PAK-7
Inventory:
92 Pcs New Original In Stock
12880155
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SCTH90N65G2V-7 Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
157 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3300 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
330W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
H2PAK-7
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Base Product Number
SCTH90
Datasheet & Documents
Datasheets
Additional Information
Other Names
497-18352-6
497-18352-2
497-18352-1
Standard Package
1,000
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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