Manufacturer Product Number:
SCTWA90N65G2V
Product Overview
Manufacturer:
STMicroelectronics
DiGi Electronics Part Number:
SCTWA90N65G2V-DG
Description:
SILICON CARBIDE POWER MOSFET 650
Detailed Description:
N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole TO-247 Long Leads
Inventory:
12989797
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SCTWA90N65G2V Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
STMicroelectronics
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
119A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
24mOhm @ 50A, 18V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
157 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
3380 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
565W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247 Long Leads
Package / Case
TO-247-3
Datasheet & Documents
Datasheets
Additional Information
Other Names
497-SCTWA90N65G2V
Standard Package
30
Environmental & Export Classification
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Alternative Models
PART NUMBER
MSC015SMA070B
MANUFACTURER
Microchip Technology
QUANTITY AVAILABLE
497
DiGi PART NUMBER
MSC015SMA070B-DG
UNIT PRICE
24.79
SUBSTITUTE TYPE
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DIGI Certification
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