SIHA17N80AE-GE3
Manufacturer Product Number:

SIHA17N80AE-GE3

Product Overview

Manufacturer:

Vishay Siliconix

DiGi Electronics Part Number:

SIHA17N80AE-GE3-DG

Description:

MOSFET N-CH 800V 7A TO220
Detailed Description:
N-Channel 800 V 7A (Tc) 34W (Tc) Through Hole TO-220 Full Pack

Inventory:

1014 Pcs New Original In Stock
12978175
Request Quote
Quantity
Minimum 1
num_del num_add
*
*
*
*
(*) is mandatory
We'll get back to you within 24 hours
SUBMIT

SIHA17N80AE-GE3 Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Vishay
Packaging
Tube
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
290mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
62 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1260 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
34W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220 Full Pack
Package / Case
TO-220-3 Full Pack
Base Product Number
SIHA17

Datasheet & Documents

Additional Information

Other Names
742-SIHA17N80AE-GE3
Standard Package
1,000

Environmental & Export Classification

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
Related Products
taiwan-semiconductor

TQM110NB04CR RLG

MOSFET N-CH 40V 12A/54A 8PDFNU

fairchild-semiconductor

FDS6630A

MOSFET N-CH 30V 6.5A 8SOIC

microchip-technology

MSC400SMA330B4

MOSFET SIC 3300 V 400 MOHM TO-24

fairchild-semiconductor

FCH077N65F-F155

MOSFET N-CH 650V 54A TO247