SISS26LDN-T1-GE3 Vishay Siliconix
5.0 / 5.0 - (359 Ratings)

SISS26LDN-T1-GE3

Product Overview

12787662

DiGi Electronics Part Number

SISS26LDN-T1-GE3-DG

Manufacturer

Vishay Siliconix
SISS26LDN-T1-GE3

Description

MOSFET N-CH 60V 23.7A/81.2A PPAK

Inventory

4119 Pcs New Original In Stock
N-Channel 60 V 23.7A (Ta), 81.2A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
Single FETs, MOSFETs
SISS26LDN-T1-GE3 Datasheet
Quantity
Minimum 1

Purchase and inquiry

RFQ (Request for Quotations)

You can submit your RFQ inquiry directly on the product detail page or RFQ page. Our sales team will respond to your request within 24 hours.

Payment method

We offer the several convenient payment method including PayPal (recommended for new customers), Credit Cards, and Wire Transfers(T/T) by USD, EUR, HKD and others.

IMPORTANT NOTICE

After you send RFQ, you will receive an email in your inbox about our receipt of your inquiry. If you don't receive it, our email address may be misidentified as spam. Please check your spam folder and add our email address [email protected] to your whitelist for ensuring that you receive our quotation. Due to the possibility of inventory and price fluctuations, our sales team need reconfirm your inquiry or order and send you any updates by email in a timely manner. If you have any other questions or need additional help, please feel free to let us know.

In Stock (All prices are in USD)
  • QTY Target Price Total Price
  • 3000 0.48 1442.40
  • 6000 0.45 2717.94
  • 9000 0.44 3930.97
Better Price by Online RFQ.
Request Quote(Ships tomorrow)
Quantity
Minimum 1
(*) is mandatory
We'll get back to you within 24 hours

SISS26LDN-T1-GE3 Technical Specifications

Category FETs, MOSFETs, Single FETs, MOSFETs

Manufacturer Vishay

Packaging Tape & Reel (TR)

Series TrenchFET® Gen IV

Product Status Active

FET Type N-Channel

Technology MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss) 60 V

Current - Continuous Drain (Id) @ 25°C 23.7A (Ta), 81.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V

Rds On (Max) @ Id, Vgs 4.3mOhm @ 15A, 10V

Vgs(th) (Max) @ Id 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V

Vgs (Max) ±20V

Input Capacitance (Ciss) (Max) @ Vds 1980 pF @ 30 V

FET Feature -

Power Dissipation (Max) 4.8W (Ta), 57W (Tc)

Operating Temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Supplier Device Package PowerPAK® 1212-8S

Package / Case PowerPAK® 1212-8S

Base Product Number SISS26

Datasheet & Documents

Datasheets

Download SISS26LDN-T1-GE3 Product Specification (PDF)
HTML Datasheet

SISS26LDN-T1-GE3-DG

Environmental & Export Classification

RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095

Additional Information

Other Names
SISS26LDN-T1-GE3CT
SISS26LDN-T1-GE3DKR
SISS26LDN-T1-GE3TR
Standard Package
3,000
DIGI Certification
ISO 209001_2015
ISO 209001_2015
ISO 14001_2015
ISO 2014001_2015
ISO 45001_2018
ISO 2045001_2018
DUNS REGISTERED
DUNS REGISTERED
Companines Registry
Companines Registry
ASA Certificate
ASA Certificate
UKAS
UKAS
ESD Certificate
ESD Certificate
Related Products
Blogs & Posts
Understanding the ALE7PB05 Relay: Features, Applications, and Where to Buy
Jun 24 2025
Latest Advancements in Integrated Circuit Technology: Analysis of Five Cutting-Edge Technologies
Jan 18 2025
Advances in Inductor Technology: Innovative Applications of LTCC and High-Frequency Resonant Converters
Jan 18 2025